1 p-channel 30-v (d-s) mosfet features ? halogen-fre e according to iec 61249-2-21 definition ? trenchfet ? pow er mosfet ? 100% r g tested ? 100% uis tested ? compliant to rohs directive 2002/95/ec applications ? noteboo k computer - adaptor switch - battery switch - load switch notes: a. surface mounted on 1" x 1" f r4 board. b. t = 10 s. c. maximum under steady state conditions is 70 c/w. d. package limited. absolute maximum ratings t a = 25 c, unless otherwise noted param e ter symbol li mit un it d rain-source voltage v ds - 30 v gate-source v oltage v gs 20 continuou s drain current (t j = 150 c) t c = 25 c i d - 40 d a t c = 70 c - 40 d t a = 25 c - 22.4 a, b t a = 70 c - 17.9 a, b pulsed drain current i dm - 70 continuou s source-drain diode current t c = 25 c i s - 40 d t a = 25 c - 4.5 a, b a valanche current l = 0. 1 mh i as - 30 single-pulse a valanche energy e as 45 mj max imum power dissipation t c = 25 c p d 48 w t c = 70 c 30 t a = 25 c 5.0 a, b t a = 70 c 3.2 a, b operating j unction and storage temperature range t j , t stg - 55 to 150 c soldering r ecommendations (peak temperature) e, f 260 the rmal resistance ratings p arameter symbol typic al maximum unit ma ximum junction-to-ambient a, c t 10 s r thja 20 25 c/w maxim um junction-to-case steady state r thjc 2.1 2. 6 s g d p-channel mosfet product summary v ds (v) r ds(on) ( )i d (a) q g (typ.) - 30 0.0055 at v gs = - 10 v - 40 d 49.5 nc 0.0090 at v gs = - 4.5 v - 4 0 d to-251 s d g top view www.din-tek.jp dtl 40 p 03
2 no t e s: a. p ulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design, not s ubject to production testing. stresses b eyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. specifications t j = 25 c, unless otherwise noted param e ter symb ol t est c onditions min. typ. max. un it static drain-source breakdown v oltage v ds v gs = 0 v , i d = - 250 a - 30 v v ds temper ature coefficient ' v ds /t j i d = - 250 a - 19 mv/c v gs(t h) temperature co efficient ' v gs(th) /t j 5.2 gate-so urce threshold voltage v gs(t h) v ds = v gs , i d = - 250 a - 1.2 - 2.5 v gate-source leakage i gss v ds = 0 v , v gs = 25 v 100 na z ero gate v oltage drain current i dss v ds = - 30 v , v gs = 0 v - 1 a v ds = - 30 v, v gs = 0 v, t j = 55 c - 5 on-state dr ain current a i d(on ) v ds t - 10 v, v gs = - 10 v - 50 a drain-source on-state resistance a r ds(o n ) v gs = - 10 v , i d = - 15 a 0.0 042 0.0055 : v gs = - 4.5 v , i d = - 10 a 0.0 074 0.0090 forward transconductance a g fs v ds = - 10 v , i d = - 15 a 54 s dynam i c b input capacita n ce c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz 4230 pf output c apacitance c oss 695 rev erse t ransfer capacitance c rss 670 t o tal gate charge q g v ds = - 15 v , v gs = - 10 v, i d = - 10 a 97 14 6 nc v ds = - 15 v , v gs = - 4.5 v, i d = - 10 a 49 .5 74.5 gate-s ource charge q gs 11.7 gate- dr ain charge q gd 22.6 g a te resistance r g f = 1 mhz 0.4 1 .6 3.2 : tu r n - o n d e l ay t i m e t d(o n) v dd = - 15 v, r l = 1.5 : i d # - 10 a, v gen = - 10 v, r g = 1 : 17 34 ns rise time t r 12 24 t ur n-off delaytime t d(off) 56 11 0 fa ll time t f 12 24 tu r n - o n d e l ay t i m e t d(on) v dd = - 15 v, r l = 1.5 : i d # - 10 a, v gen = - 4.5 v, r g = 1 : 70 14 0 rise time t r 58 11 5 t urn-off delaytime t d( off) 47 90 fa l l time t f 24 48 drain- so urce body diode characteristics continous source-drain diode current i s t c = 25 c - 40 a pulse diode forward current i sm - 70 body diode vo ltage v sd i s = - 3 a, v gs = 0 v - 0.72 - 1.1 v body diode reverse recovery time t rr i f = - 10 a, di/dt = 100 a/s, t j = 25 c 30 60 n s body diode reverse recovery charge q rr 22 45 nc re verse recovery fall time t a 14 ns reverse reco very rise time t b 16 z z z g l q w h n m s ' 7 / 3
3 typica l c har acteristics 25 c, unless otherwise noted outpu t characteristics on-resistance vs. drain current gate charge 0 16 32 4 8 64 8 0 0.0 0 .5 1.0 1.5 2.0 2.5 v gs =10 v thr u 4 v v gs =3 v v ds - drain- to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0.002 0.004 0.006 0.00 8 0.010 0.012 01 4 2 8 42 56 70 v gs =10 v v gs =4. 5 v - on- r esistance ( ) r ds(on) i d - drain c u rrent (a) 0 2 4 6 8 10 0 2 04 060 8 0 100 v ds =20 v v ds =15 v i d =10a v ds =10 v - gate- t o-so u rce v oltage ( v ) q g - total gate charge (nc) v gs transfer characteristics capa citance on-resistance vs. junction temperature 0 2 4 6 8 10 012 3 45 t c = 25 c t c = 125 c t c = - 55 c v gs - g ate -to-so u rce v oltage ( v ) - drain c u rrent (a) i d 0 1300 2600 3900 5200 6500 06 1 2 1 8 24 30 c iss c oss c rss v ds - drain - to-so u rce v oltage ( v ) c - capacitance (pf) 0.7 0.9 1.1 1.3 1.5 1.7 - 50 - 25 0 25 50 75 100 125 150 i d =15a v gs =4. 5 v v gs =10 v t j -j u nction temperat u re (c) ( n ormalized) - on - r esistance r ds(on) www.din-tek.jp dtl 40 p 03
4 ty pi cal ch aracteristics 25 c, unless otherwise noted sourc e -drain diode forward voltage threshold voltage 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v sd -so u rce -to-drain v oltage ( v ) - so u rce c u rrent (a) i s - 0.4 - 0.1 0.2 0.5 0. 8 - 50 - 25 0 25 50 75 100 125 150 i d = 250 a i d =5ma v ariance ( v ) v gs(th) t j - t emperat u re (c) on-re sistan ce vs. gate-to-source voltage single pulse power, junction-to-ambient 0.000 0.006 0.012 0.01 8 0.024 0.030 012345 67 8 91 0 t j = 125 c t j =25 c i d =15a - on- r esistance ( ) r ds(on) v gs - g ate -to-so u rce v oltage ( v ) 0 40 8 0 120 160 200 01 1 100. 0 0 .01 0.1 time (s) po w er ( w ) saf e op erating area 0.01 100 1 100 0.01 0.1 1ms 10 s 10 ms 0 . 111 0 10 t a = 25 c single p u lse dc b v dss limited 1s 100 m s limited b yr ds(on) * v ds - drain - to-so u rce v oltage ( v ) * v gs > minim u m v gs at w hich r ds(on) is specified - drain c u rrent (a) i d www.din-tek.jp dtl 40 p 03
5 typica l c har acteristics 25 c, unless otherwise noted * t he po wer dissipation p d is based on t j(max ) = 150 c , using junction-to-case thermal resi stance, and is more useful in settling the upper diss i pation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limit. curr ent derating* 0 16 32 4 8 64 8 0 0 25 50 75 100 125 150 package limited t c - case t emperat u re (c) i d - drain c u rrent (a) powe r, ju nction-to-case 0 12 24 36 4 8 60 0 25 50 75 100 125 150 t c - case t emperat u re (c) po w er ( w ) powe r d erating, junction-to-ambient 0.0 0.5 1.0 1.5 2.0 2.5 0 25 50 75 100 125 150 t a -am b ient temperat u re (c) po w er ( w ) www.din-tek.jp dtl 40 p 03
6 ty pi cal ch aracteristics 25 c, unless otherwise noted normalized t h ermal transient impedance, junction-to-ambient 10 -3 10 -2 1 10 1000 10 -1 10 -4 100 0.2 0.1 s qu are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance 1 0.1 0.01 t 1 t 2 n otes: p dm 1. d u ty cycle, d = 2. per unit base = r thja = 7 0 c/ w 3. t jm -t a =p dm z thja (t) t 1 t 2 4. s u rf ace mo u nted d u ty c y cle = 0.5 single p u lse 0.02 0.05 no rma lized thermal transient impedance, junction-to-case 1 0.1 0.01 d u ty c ycle = 0.5 10 -3 10 -2 1 10 -1 10 -4 0.02 single p u lse 0.1 0.2 0.05 s qu are w a v ep u lse d u ration (s) n ormalized ef fecti v e transient thermal impedance www.din-tek.jp dtl 40 p 03
note: dimension l3 is for reference only. l2 b1 b b2 e l3 l1 l d c a1 c1 a e 1
dim min max min max a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 b 0.71 0.89 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.43 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 e 6.48 6.73 0.255 0.265 e 2.28 bsc 0.090 bsc l 8.89 9.53 0.350 0.375 l1 1.91 2.28 0.075 0.090 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.045 0.060 ecn: s-03946?rev. e, 09-jul-01 dwg: 5346 package information www.din-tek.jp
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